k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 32

• Manufacturer Part Number: k4t1g084qe
• Description: 1gb E-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QE
K4T1G164QE
K4T1G044QE
V
V
V
V
V
V
IL
IL
REF
DDQ
IH
IH
Hold Slew Rate tangent line [ V
Rising Signal
(DC)max
(AC)max
(AC)min
(DC)min
Figure 11 - IIIustration of tangent line for tDH (differential DQS, DQS)
(DC)
DQS
DQS
V
SS
=
dc to V
dc to V
region
region
REF
REF
∆TR
tDS
tangent
REF
line
(DC) - V
32 of 45
Hold Slew Rate
Falling Signal
tDH
IL
(DC)max ]
∆TR
=
nominal
tangent line [ V
line
tDS
tangent
∆TF
line
IH
tDH
(DC)min - V
∆TF
nominal
line
Rev. 1.1 December 2008
REF
(DC) ]
DDR2 SDRAM