k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 28

• Manufacturer Part Number: k4t1g084qe
• Description: 1gb E-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QE
K4T1G164QE
K4T1G044QE
V
V
V
V
V
V
Setup Slew Rate
IL
IL
DDQ
REF
IH
IH
Falling Signal
(DC)max
(AC)max
Figure 7 - IIIustration of tangent line for tDS (differential DQS, DQS)
(AC)min
(DC)min
(DC)
DQS
DQS
V
nominal
SS
line
V
region
REF
=
tangent line[V
to ac
∆TF
∆TF
tDS
tangent
REF
line
(DC) - V
28 of 45
Setup Slew Rate
tDH
Rising Signal
IL
(AC)max]
nominal
line
=
tangent line[V
∆TR
tDS
tangent
line
∆TR
IH
tDH
(AC)min - V
V
REF
region
to ac
Rev. 1.1 December 2008
REF
(DC)]
DDR2 SDRAM