k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 27

• Manufacturer Part Number: k4t1g084qe
• Description: 1gb E-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QE
K4T1G164QE
K4T1G044QE
DQS
Note1
Note : DQS signal must be monotonic between V
V
V
V
V
Setup Slew Rate
V
V
IL
IL
Falling Signal
REF
DDQ
IH
IH
(DC)max
Figure 6 - IIIustration of nominal slew rate for tDS (single-ended DQS)
(AC)max
(DC)min
(AC)min
V
V
V
V
V
V
V
(DC)
DDQ
IH
IH
REF
IL
IL
SS
(DC)max
(AC)max
(AC)min
(DC)min
V
(DC)
SS
V
region
REF
=
to ac
V
∆TF
REF
(DC) - V
∆TF
nominal slew
tDS
IL
rate
(AC)max
27 of 45
tDH
IL
Setup Slew Rate
(AC)max and V
Rising Signal
∆TR
tDS
nominal
slew rate
IH
=
(AC)min.
V
IH
(AC)min - V
tDH
V
∆TR
REF
region
to ac
Rev. 1.1 December 2008
REF
(DC)
DDR2 SDRAM