k4t1g084qe Samsung Semiconductor, Inc., k4t1g084qe Datasheet - Page 30

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k4t1g084qe

Manufacturer Part Number
k4t1g084qe
Description
1gb E-die Ddr2 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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K4T1G084QE
K4T1G164QE
K4T1G044QE
V
V
V
V
V
V
Hold Slew Rate
IL
IL
REF
DDQ
IH
IH
Rising Signal
Figure 9 - IIIustration of nominal slew rate for tDH (differential DQS, DQS)
(DC)max
(AC)max
(AC)min
(DC)min
(DC)
DQS
DQS
V
SS
dc to V
dc to V
region
region
=
V
REF
REF
REF
(DC) - V
∆TR
slew rate
tDS
nominal
IL
(DC)max
30 of 45
tDH
∆TR
Hold Slew Rate
Falling Signal
nominal
slew rate
tDS
=
V
IH
(DC)min - V
tDH
∆TF
∆TF
Rev. 1.1 December 2008
REF
(DC)
DDR2 SDRAM

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