th50vsf3681aasb TOSHIBA Semiconductor CORPORATION, th50vsf3681aasb Datasheet - Page 24

• Manufacturer Part Number: th50vsf3681aasb
• Description: Sram Flash Memory Mixed Multi-chip Package
• Manufacturer: TOSHIBA Semiconductor CORPORATION

SIMULTANEOUS READ/WRITE OPERATION
operation enables the device to simultaneously write data to or erase data from a bank while the device reads data
from another bank.
× 15 banks. Banks are switched using bank addresses (A20 to A15). For bank blocks and addresses, refer to the
Block Address Table and Block Size Table.
operating modes in which simultaneous operation can be performed.
cannot read data from addresses which are not selected for operation in the same bank. Data from such addresses
can be read using the Program Suspend or Erase Suspend function.
OPERATING MODES
The TH50VSF3680/3681AASB features a Simultaneous Read/Write operation. The Simultaneous Read/Write
The TH50VSF3680/3681AASB has a total of seventeen banks: 0.5 Mbits × 1 bank, 3.5 Mbits × 1 bank, and 4 Mbits
The Simultaneous Read/Write operation cannot perform multiple operations in a bank. The table below shows the
Note that during Auto Program execution or Auto Block Erase operation, the Simultaneous Read/Write operation
SIMULTANEOUS READ/WRITE OPERATION
Read mode
ID Read mode
Auto Program mode
Fast Program mode
Program Suspend mode
Auto Block Erase mode
Auto Multiple Block Erase mode
Erase Suspend mode
Program Suspend while Erase Suspend
CFI mode
(1) Command mode only is valid.
(2) Includes when Acceleration mode is in use.
(3) If the selected bank exists in all banks, simultaneous operation is not supported.
Block Protect and Data Polling. When using the device, reference the timing charts and flow charts together with
the description below.
Read Mode
high-speed random access as asynchronous ROM.
operation. A software reset releases ID Read mode and the lock state when automatic operation ends abnormally,
and sets to Read mode. A hardware reset terminates operation of the device and resets to Read mode. When
reading the data without changing the address immediately after power on, either input a hardware reset or
change CEF from H to L.
In addition to Read, Write, and Erase modes, the TH50VSF3680/3681AASB features many functions including
To read data from the memory cell array, set the device to Read mode. In Read mode, the device can perform
The device is automatically set to Read mode immediately after power on or after completion of automatic
(1)
(2)
ONE BANK STATUS
(3)
TH50VSF3680/3681AASB
OTHER BANK STATUS
Read mode
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