th50vsf3681aasb TOSHIBA Semiconductor CORPORATION, th50vsf3681aasb Datasheet - Page 19

• Manufacturer Part Number: th50vsf3681aasb
• Description: Sram Flash Memory Mixed Multi-chip Package
• Manufacturer: TOSHIBA Semiconductor CORPORATION

RECOMMENDED DC OPERATING CONDITIONS
CAPACITANCE
V
V
V
V
V
V
V
(1) −2.0 V for pulse width ≤ 20 ns
C
C
Note: These parameters are sampled periodically and are not tested for every device.
CCs
IH
IL
DH
LKO
ACC
ID
IN
OUT
SYMBOL
SYMBOL
/V
CCf
Power Supply Voltage
Input High-Level Voltage
Input Low-Level Voltage
Data Retention Voltage for SRAM
Flash Low-Lock Voltage
High Voltage for
High Voltage for RESET
Input Capacitance
Output Capacitance
(Ta = = = = 25°C, f = = = = 1 MHz)
PARAMETER
WP
PARAMETER
/ACC
CONDITION
V
V
IN
OUT
= GND
= GND
(Ta = = = = − − − − 20°~85°C)
−0.3
MIN
11.4
MIN
2.7
2.2
1.5
2.3
8.5


(1)
TH50VSF3680/3681AASB
TYP.
TYP.









2001-03-06 19/55
V
V
CC
CC
MAX
MAX
12.6
TBD
TBD
3.3
3.3
2.5
9.5
+ 0.3
× 0.2
UNIT
UNIT
pF
pF
V