th50vsf3681aasb TOSHIBA Semiconductor CORPORATION, th50vsf3681aasb Datasheet - Page 20

• Manufacturer Part Number: th50vsf3681aasb
• Description: Sram Flash Memory Mixed Multi-chip Package
• Manufacturer: TOSHIBA Semiconductor CORPORATION

DC CHARACTERISTICS
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
(1) The device is going to Automatic Sleep Mode, when address remain steady during 150 ns.
(2) In Standby Mode, with
SYMBOL
IL
ILW
SOH
SOL
FOH1
FOH2
FOL
LO
CCO1
CCO2
CCO3
CCO4
CCO5
CCO6
CCO7
CCS1
CCS2
CCS3
CCS4
ACC
CIOS ≥ V
Input Leakage Current
Input Leakage Current
(
SRAM Output High Current
SRAM Output Low Current
Flash Output High Current (TTL) V
Flash Output High Current
(CMOS)
Flash Output Low Current
Output Leakage Current
Flash Average Read Current
Flash Average Program/
Erase Current
SRAM Average Operating
Current
Flash Average
Read-While-Program Current
Flash Average
Read-While- Erase Current
Flash Average Program-While-
Erase-Suspend Current
Flash Standby Current
Flash Standby Current
(Automatic Sleep Mode
SRAM Standby Current
High Voltage Input Current for
WP
WP
CCs
/ACC
/ACC
− 0.2 V or CIOS ≤ 0.2 V.
PARAMETER
pin)
CE
1
S
(1)
(Ta = = = = − − − − 20°~85°C, V
≥ V
)
CCs
− 0.2 V, these limits are guaranteed when CE2S ≥ V
V
0 V ≤ V
V
V
V
V
V
V
t
CE2S = V
V
V
V
V
or CE2S = 0.2 V
8.5 V ≤ V
CEF = V
CEF = V
CE
OE = V
CE
CEF = RESET = V
CE
CE
cycle
IN
OH
OL
OH
OH
OH
OL
OUT
IN
IN
IN
IH
1
1
1
1
= 0 V~V
= V
= V
= V
= V
S
S
S
S
= 0.4 V
= 0.4 V
= V
= 2.4 V
= V
= V
= t
= 0 V~V
IN
IH
IH
IH
CCf
= V
= 0.2 V, OE = V
= V
= V
RC
CCs
CCf
CCf
IH
/V
/V
/V
ACC
CCs
≤ V
IL
IL
, I
CCs
IL
IH
(min)
IL
IL
IL
or V
, OE = V
, OE = V
CC
× 0.85
− 0.4 V
, CE2S = V
OUT
− 0.5 V
, I
, I
, I
CC
or CE2S = V
≤ 9.5 V
CC
− 0.2 V, I
− 0.2 V
OUT
OUT
OUT
(2)
IL
CCs
, OE = V
= 0 mA
= V
= 0 mA, t
= 0 mA, t
= 0 mA
/V
SS
CONDITION
CCf
IH
IH
V
V
OUT
IH
CCf
, I
, I
CCs
CCs
CCs
,
OUT
OUT
or RESET = V
IL
IH
= 0 mA
cycle
cycle
= 3.3 V
= 3.0 V
= = = = 2.7 V~3.3 V)
− 0.2 V,
= 0 mA,
= 0 mA
= t
= t
RC
RC
(min)
(min)
TH50VSF3680/3681AASB
t
t
t
t
Ta = 25°C
Ta = −20~85°C
Ta = 25°C
Ta = −20~40°C
Ta = −20~85°C
cycle
cycle
cycle
cycle
SS
= t
= 1 MHz
= t
= 1 MHz
RC
RC
CCs
− 0.2 V or CE2S ≤ 0.2 V and
2001-03-06 20/55
−100
−0.5
−0.4
−2.5
MIN
2.1
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4
TYP.
0.01
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MAX UNIT
±10
0.5
±1
±1
30
15
50
10
45
45
45
15
10
10
10
20


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
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5
2
1
1
5
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA