am42dl3224gt71it Meet Spansion Inc., am42dl3224gt71it Datasheet - Page 60

• Manufacturer Part Number: am42dl3224gt71it
• Description: Stacked Multi-chip Package Mcp Flash Memory And Sram 32 Megabit 4 M X 8-bit/2 M X 16-bit Cmos 3.0 Volt-only, Simultaneous Operation Flash Memory And 4 Mbit 256 K X 16-bit Static Ram
• Manufacturer: Meet Spansion Inc.

Flash Erase And Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25 C, 3.0 V V
2. Under worst case conditions of 90 C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
FLASH LATCHUP CHARACTERISTICS
Note: Includes all pins except V
PACKAGE PIN CAPACITANCE
Note: 7.Test conditions T
FLASH DATA RETENTION
60
Parameter
Sector Erase Time
Chip Erase Time
Byte Program Time
Word Program Time
Accelerated Byte/Word Program Time
Chip Program Time
(Note 3)
Input voltage with respect to V
(including OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
14 and 16 or further information on command definitions.
Parameter
Current
Symbol
C
C
C
C
OUT
IN2
IN3
IN
Description
Input Capacitance
Output Capacitance
Control Pin Capacitance
WP#/ACC Pin Capacitance
A
= 25°C, f = 1.0 MHz.
Description
SS
SS
CC
Word Mode
Byte Mode
on all pins except I/O pins
on all I/O pins
. Test conditions: V
CC
= 2.7 V, 1,000,000 cycles.
P R E L I M I N A R Y
Typ (Note 1)
CC
Am42DL32x4G
= 3.0 V, one pin at a time.
0.4
28
21
14
5
7
4
Max (Note 2)
Test Setup
V
V
V
V
OUT
IN
IN
IN
150
210
120
63
42
5
= 0
= 0
= 0
= 0
Test Conditions
–100 mA
–1.0 V
–1.0 V
Min
CC
150 C
125 C
, 1,000,000 cycles. Additionally,
Unit
sec
sec
sec
µs
µs
µs
Typ
12
14
17
11
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Comments
Max
V
14
16
16
20
+100 mA
CC
12.5 V
Min
Max
10
20
May 19, 2003
+ 1.0 V
Unit
Years
Years
pF
pF
pF
pF
Unit