ssm3k38mfv TOSHIBA Semiconductor CORPORATION, ssm3k38mfv Datasheet - Page 4

• Manufacturer Part Number: ssm3k38mfv
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.01
100
100
0.1
5000
3000
1000
10
1.0
0.5
500
300
100
1
50
30
10
0
0
−50
0.1
Common Source
V
G
GS
= 0 V
t f
Ta = 100°C
t on
t off
t r
Drain–source voltage V
S
Ambient temperature Ta (°C)
D
I
DR
Drain current I
1
−0.5
0
I
DR
V
– V
th
t – I
50
10
– Ta
−25°C
DS
D
25°C
D
−1
Common Source
I D = 1 mA
V DS = 3 V
DS
(mA)
Common Source
V DD = 3 V
V GS = 0 to 2.5 V
Ta = 25°C
100
100
(V)
−1.5
1000
150
4
250
200
150
100
500
300
100
100
50
50
30
10
50
10
0
5
3
1
0
5
1
1
0.1
Common Source
V GS = 0 V
f = 1 MHz
Ta = 25°C
20
Drain – Source voltage V
Ambient temperature Ta (°C)
40
0.5
Drain current I
10
1
60
⎪Y
P
C – V
D
fs
80
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
Cu Pad : 585 mm
– Ta
⎪ – I
DS
5
D
100
D
100
Common Source
V DS = 3 V
Ta = 25°C
SSM3K38MFV
10
(mA)
120
DS
2
)
C oss
C iss
C rss
(V)
140
2007-11-01
50
160
1000
100