ssm3k38mfv TOSHIBA Semiconductor CORPORATION, ssm3k38mfv Datasheet - Page 2

• Manufacturer Part Number: ssm3k38mfv
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Switching Time Test Circuit
Marking
Notice on Usage
this product. For normal switching operation, V
voltage than V
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
V
Take this into consideration when using the device.
(a) Test Circuit
th
can be expressed as the voltage between gate and source when the low operating current value is I
1
NL
2.5 V
3
th.
0
V
D.U. < = 1%
V
(Z
Common Source
Ta = 25°C
(The relationship can be established as follows: V
DD
IN
2
out
10 μs
: t
= 3 V
r
= 50 Ω)
, t
f
< 5 ns
IN
Equivalent Circuit
OUT
R
V
1
L
DD
GS (on)
3
(b) V
(c) V
requires a higher voltage than V
2
2
OUT
IN
(top view)
GS (off)
< V
V
DS (ON)
th
V
2.5 V
DD
0 V
< V
GS (on).
th
and V
)
t
on
10%
GS (off)
t
r
SSM3K38MFV
10%
90%
requires a lower
t
D
2007-11-01
90%
off
= 1 mA for
t
f