ssm3k38mfv TOSHIBA Semiconductor CORPORATION, ssm3k38mfv Datasheet - Page 3

• Manufacturer Part Number: ssm3k38mfv
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

400
300
200
100
10
0
10
5
0
5
0
0
1
0
1.5 V
2.5 V
V GS = 1.2 V
4 V
Common Source
Ta = 25°C
Drain–source voltage V
Gate–source voltage V
10
2
0.5
Drain current I
4
10
R
R
DS (ON)
2.5
DS (ON)
I
4
D
– V
1
DS
– V
– I
D
6
Common Source
Ta = 25°C
D
GS
100
25°C
(mA)
Common Source
I D = 5 mA
DS
GS
1.5
V GS = 1.2 V
(V)
Ta = 100°C
8
(V)
−25°C
1.8
1.5
1000
2
10
3
1000
0.01
100
10
0.1
10
10
5
0
−50
1
5
0
0
0
V GS = 1.2 V, I D = 5 mA
1.5 V, 5 mA
Common Source
V DS = 3 V
2.5 V, 50 mA
Common Source
4 V, 50 mA
25°C
Ta = 100°C
Gate–source voltage V
Gate–source voltage V
Ambient temperature Ta (°C)
2
0
−25°C
1
R
R
DS (ON)
DS (ON)
4
I
D
– V
50
GS
– V
– Ta
6
GS
Common Source
I D = 50 mA
2
25°C
GS
GS
SSM3K38MFV
100
8
(V)
(V)
Ta = 100°C
2007-11-01
−25°C
150
10
3