ssm3k38mfv TOSHIBA Semiconductor CORPORATION, ssm3k38mfv Datasheet
ssm3k38mfv
Manufacturer Part Number
ssm3k38mfv
Description
Toshiba Field-effect Transistor Silicon N-channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.SSM3K38MFV.pdf
(5 pages)
○ High-Speed Switching Applications
○ Analog Switch Applications
•
•
Absolute Maximum Ratings (Ta = 25˚C)
Electrical Characteristics
1.2V drive
Low ON-resistance : R
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
Note:
Note 1: Mounted on an FR4 board
Gate leakage current
Drain–source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Drain–source forward voltage
Note 2: Pulse test
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t,Cu Pad:0.585mm
Characteristic
Characteristic
Turn-on time
Turn-off time
: R
: R
: R
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
on
on
on
on
= 20 Ω (max) (@V
= 8 Ω (max) (@V
= 4 Ω (max) (@V
= 3 Ω (max) (@V
Pulse
DC
SSM3K38MFV
(Ta = 25°C)
V
P
R
Symbol
Symbol
(BR) DSS
D
DS (ON)
V
V
⏐Y
V
I
I
C
C
T
C
GSS
I
T
DSS
(Note 1)
V
GSS
t
t
DSS
DSF
I
DP
oss
on
off
stg
rss
D
ch
iss
th
fs
GS
⏐
GS
GS
GS
= 1.5 V)
= 1.2 V)
= 2.5 V)
= 4.0 V)
V
I
V
V
V
I
I
I
I
V
V
V
I
D
D
D
D
D
D
GS
DS
DS
DS
DS
DD
GS
= 0.1 mA, V
= 50 mA, V
= 50 mA, V
= 5 mA, V
= 5 mA, V
= - 180 mA, V
−55~150
Rating
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= ±10 V, V
= 3 V, I
= 0 to 2.5 V
2
±10
180
360
150
150
20
)
1
Test Condition
D
D
D
GS
GS
GS
GS
GS
= 1 mA
= 50 mA
GS
= 50 mA,
GS
DS
= 1.5 V
= 1.2 V
= 0 V, f = 1 MHz
GS
= 4 V
= 2.5 V
= 0 V
= 0 V
= 0 V
= 0 V
Unit
mW
mA
°C
°C
V
V
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
Weight: 1.5 mg (typ.)
JEDEC
JEITA
TOSHIBA
ＶＥＳＭ
Min
115
0.4
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
1
SSM3K38MFV
Typ.
-0.9
145
1.5
9.5
4.1
9.5
70
⎯
⎯
⎯
⎯
⎯
2
3
5
1.2±0.05
0.8±0.05
2-1L1B
2007-11-01
Max
-1.2
-
-
1.0
±1
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
3
4
8
3
1.Gate
2.Source
3.Drain
Unit: mm
Unit
mS
μA
μA
pF
ns
Ω
V
V
V
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ssm3k38mfv Summary of contents
Page 1
... C oss mA 2 off = - 180 mA DSF SSM3K38MFV Unit: mm 1.2±0.05 0.8±0. 1.Gate 2.Source ＶＥＳＭ 3.Drain JEDEC - JEITA - TOSHIBA 2-1L1B Weight: 1.5 mg (typ.) Min Typ. Max Unit ⎯ ⎯ ...
Page 2
... V IN OUT OUT Equivalent Circuit (top view requires a higher voltage than V GS (on) GS (off) 2 SSM3K38MFV 2.5 V 90% 10 10% 90 (ON off = 1 mA for D and V ...
Page 3
... Gate–source voltage V 10 Common Source −50 1000 Ambient temperature Ta (°C) 3 SSM3K38MFV I – −25° ( – (ON) GS Common Source 25° 100°C − ...
Page 4
... MHz Ta = 25°C 1 0.1 0.5 −1.5 Drain – Source voltage V 250 200 150 100 50 1000 Ambient temperature Ta (°C) 4 SSM3K38MFV ⎪Y ⎪ – Common Source 25°C 100 1000 (mA – iss C oss C rss ...
Page 5
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K38MFV 20070701-EN GENERAL 2007-11-01 ...