ssm6k34tu TOSHIBA Semiconductor CORPORATION, ssm6k34tu Datasheet - Page 4

• Manufacturer Part Number: ssm6k34tu
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
120
100
100
60
40
10
80
20
10
−80
8
6
4
2
0
0
1
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
Common Source
I D = 3.0 A
Ta = 25°C
0.3
−40
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
2
Capacitance – V
V GS = 4.5V
VDD = 15V
0
1
R
I D = 4, 2, 1A
DS (ON)
4
40
3
5
– Ta
6
10
80
V GS = 10V
DS
2A
VDD = 24V
C oss
C rss
C iss
I D = 4A
120
8
30 50
1A
160
100
10
4
0.5
0.3
0.1
100
100
10
10
2
−80
5
3
1
3
1
0
0.00
1
0
Common source
V DS = 10 V
I D = 1mA
Pulse test
-0.2
10
−40
0.01
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
-0.4
Pulse width t
0
0.1
5.0
I
DR
V
th
r
-0.6
th
– V
40
Single Pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 645 mm
– Ta
1
– t
DS
3.0
w
1.0
w
-0.8
80
10
(s)
Common source
Ta = 25°C
Pulse test
V GS = 0 V
SSM6K34TU
2
)
-1.0
120
100
2007-11-01
-1.2
160
1000