ssm6k34tu TOSHIBA Semiconductor CORPORATION, ssm6k34tu Datasheet - Page 2

• Manufacturer Part Number: ssm6k34tu
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Switching Time Test Circuit
Precaution
this product. For normal switching operation, V
voltage than V
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Marking
V
(The relationship can be established as follows: V
Take this into consideration when using the device.
(a) Test Circuit
th
can be expressed as the voltage between gate and source when the low operating current value is I
6
1
10 V
K N C
0
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
th.
5
2
DD
IN
G
10 μs
: t
= 4.7 Ω
= 15 V
r
, t
4
3
f
< 5 ns
IN
Equivalent Circuit (Top View)
V
DD
OUT
GS (on)
6
1
GS (off)
5
2
(b) V
(c) V
requires a higher voltage than V
4
3
< V
2
OUT
IN
th
< V
GS (on).
V
DS (ON)
)
10 V
V
0 V
DD
th
and V
t
10%
on
GS (off)
t
r
90%
10%
SSM6K34TU
requires a lower
90%
t
D
2007-11-01
off
t
= 1 mA for
f