ssm6k34tu TOSHIBA Semiconductor CORPORATION, ssm6k34tu Datasheet
ssm6k34tu
Manufacturer Part Number
ssm6k34tu
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.SSM6K34TU.pdf
(5 pages)
High Current Switching Applications
Power Management Switch Applications
•
•
Absolute Maximum Ratings
Electrical Characteristics
4.5Vdrive
Low on resistance:
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on FR4 board.
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Total gate charge
Gate−source charge
Gate−drain charge
Switching time
Drain-Source forward voltage
Note2: Pulse test
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Turn-on time
Turn-off time
DC
Pulse
:R
:R
on
on
= 77 mΩ (max) (@V
= 50 mΩ (max) (@V
(Ta = 25°C)
SSM6K34TU
(Ta = 25°C)
V
V
R
Symbol
Symbol
(Note 1)
(BR) DSS
(BR) DSX
DS (ON)
V
⏐Y
V
I
I
C
V
C
T
C
Q
GSS
Q
I
T
DSS
V
GSS
Q
t
t
DSF
I
DP
P
oss
on
off
DS
stg
rss
D
ch
iss
gs
gd
th
fs
D
g
⏐
GS
GS
I
I
V
V
V
V
I
I
V
V
V
V
V
I
D
D
D
D
D
DS
GS
DS
DS
DS
DS
GS
DD
GS
= 10 mA, V
= 10 mA, V
= 2 A, V
= 2 A, V
= -3A, V
−55~150
= 4.5 V)
= 10 V)
Rating
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= 24 V, I
= ±16 V, V
= 10 V
= 15 V, I
= 0~10 V, R
2
±20
500
150
30
3
6
1
)
GS
GS
GS
Test Condition
DS
D
D
D
GS
GS
GS
= 4.5 V
= 10 V
GS
= 0V
= 1 mA
= 2 A
DS
= 2 A,
= 3.0 A
G
= 0
= −20 V
= 0
= 0, f = 1 MHz
= 0
= 4.7 Ω
Unit
mW
°C
°C
V
V
A
(Note2)
(Note2)
(Note2)
(Note2)
Weight: 7.0 mg (typ.)
JEDEC
JEITA
TOSHIBA
1,2,5,6 : Drain
3
4
Min
1.3
3.4
30
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
―
―
―
⎯
⎯
―
Typ.
−0.8
470
: Gate
: Source
6.8
7.6
2.4
8.3
58
38
60
80
10
22
⎯
⎯
⎯
⎯
⎯
SSM6K34TU
2-2T1D
2007-11-01
⎯
⎯
−1.2
Max
±10
2.5
10
77
50
⎯
⎯
⎯
⎯
⎯
⎯
―
―
―
⎯
⎯
Unit: mm
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
V
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ssm6k34tu Summary of contents
Page 1
... 0~ 4.7 Ω off -3A DSF SSM6K34TU 1,2,5,6 : Drain 3 : Gate 4 : Source ⎯ JEDEC ⎯ JEITA TOSHIBA 2-2T1D Weight: 7.0 mg (typ.) Min Typ. Max ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ ⎯ 10 ⎯ ...
Page 2
... V IN OUT (c) V OUT (ON requires a higher voltage than V GS (on) < V < (off (on). 2 SSM6K34TU 10 V 90% 10 90% 10 off = 1 mA for D and V requires a lower th GS (off) 2007-11-01 ...
Page 3
... Drain-source voltage 2.0 1.6 1.2 0.8 0 Gate-source voltage V GS 100 100 0.1 3 SSM6K34TU I – Common source Ta = 25°C 3.8 Pulse test 3.5 3 (V) V – Common source Ta= 25℃ Pulse test ...
Page 4
... Drain-source voltage Common source 1mA Pulse test 0 −80 − 100 100 100 0.00 0.01 4 SSM6K34TU I – 5.0 3.0 1 Common source Ta = 25°C Pulse test -0.4 -0.6 -0.8 -1.0 -1.2 V – 120 160 Ambient temperature Ta (°C) r – ...
Page 5
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6K34TU 20070701-EN GENERAL 2007-11-01 ...