ssm6k34tu TOSHIBA Semiconductor CORPORATION, ssm6k34tu Datasheet - Page 3

• Manufacturer Part Number: ssm6k34tu
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
10
8
6
4
2
0
5
4
3
2
1
0
1
0
0
0
Common source
V DS = 10 V
Pulse tset
Common source
V DS = 10 V
Pulse test
8.0
10
Drain-source voltage V DS
Gate-source voltage V GS
0.2
1
0.3
Drain current I D (A)
4.5
0.4
2
⎪Y
I
I
D
D
100
fs
3.8
– V
– V
⎪ – I
1
6.0
DS
GS
D
0.6
Ta = −55°C
3
Ta = −55°C
25
3.5
Common source
Ta = 25°C
Pulse test
25
3
(V)
V GS = 2.8 V
(V)
0.8
4
100
3.2
3.0
1.0
10
5
3
100
2.0
1.6
1.2
0.8
0.4
10
30
10
8
6
4
2
0
0
0.1
0
0
10
4.5
6.0
8.0
Drain-source voltage
Gate-source voltage V GS
1
2
1
Drain current I D (A)
R
V
DS (ON)
2
4
I
DS
D
V GS = 10V
3.8
– V
– V
1
DS
3.5
GS
4.5
– I
3
2
6
V DS
D
Common source
Ta = 25°C
Pulse test
Common source
Ta= 25℃
Pulse test
Common source
Ta = 25°C
Pulse test
3.2
V GS = 2.8 V
SSM6K34TU
I D = 4A
(V)
(V)
4
8
3.0
2007-11-01
10
5
10