bh616uv4010ti-55 Brillance Semiconductor, bh616uv4010ti-55 Datasheet - Page 8

• Manufacturer Part Number: bh616uv4010ti-55
• Description: Ultra Low Power/high Speed Cmos Sram 256k X 16 Bit
• Manufacturer: Brillance Semiconductor

R0201-BH616UV4010
WRITE CYCLE 2
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and WE
3. t
4. During this period, DQ pins are in the output state so that the input signals of opposite phase to
5. If the CE1 low transition or the CE2 high transition occurs simultaneously with the WE low
6. OE is continuously low (OE = V
7. D
8. D
9. If CE1 is low and CE2 is high during this period, DQ pins are in the output state. Then the data
10. Transition is measured ± 500mV from steady state with C
11. t
low. All signals must be active to initiate a write and any one signal can terminate a write by
going inactive. The data input setup and hold timing should be referenced to the second
transition edge of the signal that terminates the write.
cycle.
the outputs must not be applied.
transitions or after the WE transition, output remain in a high impedance state.
input signals of opposite phase to the outputs must not be applied to them.
The parameter is guaranteed but not 100% tested.
WR
CW
OUT
OUT
is measured from the later of CE1 going low or CE2 going high to the end of write.
is measured from the earlier of CE1 or WE going high or CE2 going low at the end of write
ADDRESS
CE1
CE2
LB, UB
WE
D
D
is the same phase of write data of this write cycle.
is the read data of next address.
OUT
IN
(1,6)
IL
).
t
AS
L
(5)
(12)
(5)
t
WHZ
= 5pF.
8
(4,10)
t
AW
t
t
t
CW
CW
WP
t
t
WC
BW
(11)
(11)
(2)
t
DW
t
WR
t
t
OW
DH
(3)
BH616UV4010
(8,9)
(7)
Revision
Dec.
(8)
2005
1.0