bs62lv1605eip70 Brillance Semiconductor, bs62lv1605eip70 Datasheet

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bs62lv1605eip70

Manufacturer Part Number
bs62lv1605eip70
Description
Very Power/voltage Cmos Sram
Manufacturer
Brillance Semiconductor
Datasheet
1.BS62LV1605EIP70.pdf (9 pages)
R0201-BS62LV1605
• Vcc operation voltage : 4.5V ~ 5.5V
• Very low power consumption :
• High speed access time :
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
BS62LV1605EC
BS62LV1605FC
BS62LV1605EI
BS62LV1605FI
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc
FEATURES
Vcc = 5.0V C-grade: 113mA (@55ns) operating current
-55
-70
PRODUCT
FAMILY
GND
DQ0
DQ1
VCC
DQ2
DQ3
A
B
C
D
E
F
G
H
CE1
A19
A18
A17
A16
A15
NC
NC
NC
A20
WE
A4
A3
A2
A1
A0
BSI
55ns
70ns
A18
VSS
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
1
NC
NC
NC
D0
D3
15uA (Typ.) CMOS standby current
C-grade: 90mA (@70ns) operating current
I -grade: 115mA (@55ns) operating current
I -grade: 92mA (@70ns) operating current
48-ball BGA top view
BS62LV1605EC
BS62LV1605EI
OE
A20
2
NC
D2
A8
D1
NC
NC
VCC
A17
A14
A12
A0
3
A3
A5
A9
TEMPERATURE
-40
+0
OPERATING
O
A16
A15
A13
A10
O
4
A1
A4
A6
A7
C to +70
C to +85
Very Low Power/Voltage CMOS SRAM
2M X 8 bit
A11
A2
CE1
D5
WE
5
NC
D6
NC
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
CE2
VCC
VSS
A19
6
NC
D4
NC
D7
O
O
C
C
A5
A6
A7
OE
CE2
A8
NC
NC
DQ7
DQ6
GND
VCC
DQ5
DQ4
NC
NC
A9
A10
A11
A12
A13
A14
. reserves the right to modify document contents without notice.
4.5V ~ 5.5V
4.5V ~ 5.5V
RANGE
Vcc
55ns : 4.5~5.5V
70ns : 4.5~5.5V
SPEED
55 / 70
55 / 70
( ns )
The BS62LV1605 is a high performance , very low power CMOS Static
Random Access Memory organized as 2048K words by 8 bits and
operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
15uA at 5.0V/25
Easy memory expansion is provided by an active LOW chip enable (CE1)
, an active HIGH chip enable (CE2) and active LOW output enable (OE)
and three-state output drivers.
The BS62LV1605 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV1605 is available in 48B BGA and 44L TSOP2 packages.
1
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
CE1
Vdd
Gnd
CE2
WE
A20
A13
A17
A15
A18
A16
A14
A12
OE
A7
A6
A5
A4
Address
Buffer
Input
( I
STANDBY
CCSB1
110uA
o
Control
Vcc=5V
220uA
8
C and maximum access time of 55ns at 5.0V/85
8
POWER DISSIPATION
, Max )
24
Output
Buffer
Buffer
Data
Input
Data
Decoder
Row
113mA
Vcc=5V
115mA
55ns
Operating
8
( I
4096
8
CC
A11A9 A8 A3 A2 A1 A0A10 A19
, Max )
BS62LV1605
Vcc=5V
90mA
92mA
Address Input Buffer
70ns
Column Decoder
Memory Array
4096 X 4096
Write Driver
Sense Amp
Column I/O
4096
BGA-48-0912
TSOP2-44
TSOP2-44
BGA-48-0912
512
18
PKG TYPE
Revision 2.1
Jan.
o
C.
2004

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bs62lv1605eip70 Summary of contents

Page 1

Very Low Power/Voltage CMOS SRAM BSI bit FEATURES • Vcc operation voltage : 4.5V ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA (@55ns) operating current I -grade: 115mA (@55ns) operating current C-grade: ...

Page 2

BSI PIN DESCRIPTIONS Name A0-A20 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports Vcc Gnd TRUTH TABLE MODE WE X Not selected (Power Down) ...

Page 3

BSI DC ELECTRICAL CHARACTERISTICS PARAMETER PARAMETER NAME Guaranteed Input Low V IL (3) Voltage Guaranteed Input High V IH (3) Voltage I Input Leakage Current IL I Output Leakage Current LO V Output Low Voltage OL V Output High Voltage ...

Page 4

BSI AC TEST CONDITIONS (Test Load and Input/Output Reference) Input Pulse Levels Vcc / 0V Input Rise and Fall Times 1V/ns Input and Output 0.5Vcc Timing Reference Level Output Load ELECTRICAL CHARACTERISTICS READ CYCLE JEDEC PARAMETER PARAMETER ...

Page 5

BSI SWITCHING WAVEFORMS (READ CYCLE (1,2,4) READ CYCLE1 ADDRESS D OUT READ CYCLE2 (1,3,4) CE2 CE1 D OUT (1,4) READ CYCLE3 ADDRESS OE CE2 CE1 D OUT NOTES high in read Cycle. 2. Device is continuously selected ...

Page 6

BSI AC ELECTRICAL CHARACTERISTICS WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX E1LWH AVW AVWH WLWH WHAX WLOZ WHZ ...

Page 7

BSI (1,6) WRITE CYCLE2 ADDRESS CE2 CE1 WE D OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low. ...

Page 8

BSI ORDERING INFORMATION BS62LV1605 X X Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application ...

Page 9

BSI PACKAGE DIMENSIONS (continued) SIDE VIEW D 0.1 D1 3.375 VIEW A 48 mini-BGA (9mm x 12mm) R0201-BS62LV1605 BS62LV1605 NOTES: 1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS. 2: PIN#1 DOT MARKING BY LASER OR PAD PRINT. 3: SYMBOL "N" IS THE ...

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