lh28f008sc Sharp Microelectronics of the Americas, lh28f008sc Datasheet - Page 34

• Manufacturer Part Number: lh28f008sc
• Description: 8m 1m ? 8 Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

LH28F008SC
BLOCK ERASE, BYTE WRITE AND LOCK-BIT CONFIGURATION PERFORMANCE
V
NOTES:
1. Typical values measured at T
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. Sampled but not 100% tested.
34
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CC
WHQV
WHQV
WHQV
WHQV
WHRH
WHRH
WHQV
WHQV
WHQV
WHQV
WHRH
WHRH
SYM.
EHQV
EHQV
EHQV
EHQV
EHRH
EHRH
SYM.
EHQV
EHQV
EHQV
EHQV
EHRH
EHRH
V
on device characterization.
CC
= 5 V ± 0.5 V, 5 V ± 0.25 V, T
1
2
3
4
1
2
1
2
3
4
1
2
1
2
3
4
1
2
1
2
3
4
1
2
= 3.3 V ± 0.3 V, T
Byte Write Time
Block Write Time
Block Erase Time
Set Lock-Bit Time
Clear Block Lock-Bits Time
Byte Write Suspend
Latency Time to Read
Erase Suspend Latency
Time to Read
Byte Write Time
Block Write Time
Block Erase Time
Set Lock-Bit Time
Clear Block Lock-Bits
Time
Byte Write Suspend
Latency Time to Read
Erase Suspend
Latency Time to Read
PARAMETER
PARAMETER
A
= 0°C to +70°C
A
= +25°C and nominal voltages. Assumes corresponding lock-bits are not set. Subject to change based
A
TYP.
16.2
= 0°C to +70°C
1.1
1.8
1.8
17
21
6
TYP.
V
1
0.5
1.1
9.6
1.1
PP
12
8
5
MIN.
= 3.3 V
1.5
1
1.5
V
15
18
1
PP
MIN.
6.5
0.4
0.9
9.5
0.9
= 53 V
MAX.
TBD
TBD
TBD
TBD
TBD
20
7
MAX.
TBD
TBD
TBD
TBD
TBD
12
6
TYP.
13.3
9.3
0.6
1.2
1.2
9.6
5
1
TYP.
V
0.4
1.0
1.0
9.6
PP
10
6
4
MIN.
11.2
= 53 V
8.2
0.5
1
V
1
1
PP
MIN.
= 12 V
4.8
0.3
0.3
7.8
0.3
MAX.
TBD
TBD
TBD
TBD
TBD
12
7
MAX.
TBD
TBD
TBD
TBD
TBD
12
5
TYP.
11.6
7.6
0.5
1.1
1.1
9.6
5
UNIT
1
V
sec
sec
sec
µs
µs
µs
µs
PP
8M (1M × 8) Flash Memory
MIN.
= 12 V
6.7
0.4
0.8
9.7
0.8
NOTE
2
2
2
2
2
MAX.
TBD
TBD
TBD
TBD
TBD
12
6
UNIT
sec
sec
sec
µs
µs
µs
µs
3, 4
NOTE
2
2
2
2
2