lh28f008sc Sharp Microelectronics of the Americas, lh28f008sc Datasheet - Page 23

• Manufacturer Part Number: lh28f008sc
• Description: 8m 1m ? 8 Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

8M (1M × 8) Flash Memory
DC CHARACTERISTICS
I
I
I
I
SYM.
I
I
CCWS
I
PPE
PPWS
I
I
I
I
CCES
I
I
I
PPES
CCW
PPW
CCS
CCD
CCR
CCE
I
PPS
PPR
PPD
I
LO
LI
Input Load Current
Output Leakage Current
V
V
Current
V
V
Lock-Bit Current
V
Clear Block Lock-Bits
Current
V
Block Erase Suspend
Current
V
Current
V
Current
V
Lock-Bit Current
V
Clear Lock-Bit Current
V
Block Erase Suspend
Current
CC
CC
CC
CC
CC
CC
PP
PP
PP
PP
PP
Standby or Read
Deep Power-Down
Byte Write or Set
Block Erase or
Byte Write or
Standby Current
Deep Power-Down
Read Current
Byte Write or Set
Block Erase or
Byte Write or
PARAMETER
TYP.
V
CC
= 3.3 V
MAX.
±0.5
±0.5
100
±15
200
200
10
12
14
17
17
12
17
17
12
40
40
15
20
20
15
2
6
5
TYP.
V
CC
= 5 V
MAX.
±10
100
±15
200
200
±1
10
35
50
35
30
30
25
10
40
15
20
15
2
5
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
V
CMOS Inputs, V
CE
TTL Inputs, V
CE
RP
(RY
CMOS Inputs V
CE
f = 8 MHz (5 V), I
TTL Inputs, V
CE
f = 8 MHz, (5 V) I
V
V
V
V
V
V
CE
V
V
RP
V
V
V
V
V
V
V
V
CC
CC
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
»
»
»
»
»
»
»
»
/ BY
= RP
= RP
= GND ±0.2 V I
= GND, f = 5 MHz (3.3 V),
= V
= V
= GND ± 0.2V
> V
= V
= 3.3 V ±0.3 V
= 5.0 V ±10%
= 12.0 V ± 5%
= 3.3 V ±0.3 V
= 5.0 V ±10%
= 12.0 V ±5%
= 3.3 V ± 0.3 V
= 5.0 V ±10%
= 12.0 V ±5%
= 3.3 V ± 0.3 V
= 5.0 V ± 105
= 12.0 V ±5%
= V
= V
V
IH
IH
CC
»
) = 0 mA
CC
CC
PPH1/2/3
CC
TEST CONDITIONS
»
»
, f = 5 MHz (3.3 V),
= V
= V
MAX., V
MAX., V
CC
CC
CC
IH
CC
CC
= V
= V
±0.2 V
OUT
OUT
= V
OUT
= V
IN
OUT
CC
CC
= 0 mA
= 0 mA
= V
CC
CC
= V
MAX.
MAX.,
MAX.,
CC
MAX.
CC
or GND
or GND
LH28F008SC
1, 3, 6
1, 5, 6
NOTE
1, 7
1, 7
1, 2
1, 7
1, 7
1
1
1
1
1
1
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