rsd050n10 ROHM Co. Ltd., rsd050n10 Datasheet - Page 2

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rsd050n10

Manufacturer Part Number
rsd050n10
Description
4v Drive Nch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Gate-source leakage
Drain-source breakdown voltage V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Forward Voltage
*Pulsed
Electrical characteristics (T
Body diode characteristics (Source-Drain) (T
RSD050N10
Parameter
Parameter
a
=25°C)
Symbol
Symbol
R
V
l Y
(BR)DSS
C
t
t
I
I
C
GS (th)
DS (on)
C
Q
Q
V
d(on)
d(off)
GSS
DSS
Q
t
t
oss
rss
SD
iss
fs
r
f
gs
gd
g
l
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
Min.
Min.
100
1.0
2.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
a
=25°C)
Typ.
Typ.
135
142
145
530
1.7
3.0
50
30
10
15
45
15
14
-
-
-
-
-
-
2/6
 
Max.
Max.
±10
190
200
205
2.5
1.2
10
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Unit
m
nC
nC
nC
A
A
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
V
I
V
I
D
D
D
D
D
D
D
s
=5.0A, V
GS
DS
DS
DS
GS
GS
L
G
DD
GS
=1mA, V
=5.0A, V
=5.0A, V
=5.0A, V
=5.0A, V
=2.5A, V
=5.0A,
=20
=10
=100V, V
=10V, I
=25V
=±20V, V
=0V
=10V
=10V
Conditions
Conditions
50V
GS
GS
GS
GS
GS
DS
DD
D
=1mA
=0V
=0V
=10V
=4.5V
=4.0V
=10V
GS
DS
=0V
=0V
50V
2010.11 - Rev.A
Data Sheet

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