rsd050n10 ROHM Co. Ltd., rsd050n10 Datasheet
rsd050n10
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rsd050n10 Summary of contents
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... Drive Nch MOSFET RSD050N10 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy. Applications Switching Packaging specifications Package Type Code Basic ordering unit (pieces) Absolute maximum ratings (T =25°C) a Parameter Drain-source voltage Gate-source voltage ...
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... RSD050N10 Electrical characteristics (T =25°C) a Parameter Symbol Gate-source leakage Drain-source breakdown voltage V Zero gate voltage drain current Gate threshold voltage V Static drain-source on-state R resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time ...
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... RSD050N10 Electrical characteristic curves (T Fig.1 Typical Output Characteristics (Ⅰ =10. =4. =3. 0.2 0.4 Drain-Source Voltage : V Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 T =25°C a pulsed 100 0.01 0.1 Drain Current : I Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10000 V =4.5V GS pulsed ...
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... RSD050N10 Fig.7 Forward Transfer Admittance vs. Drain Current 100 V =10V DS pulsed 10 1 0.1 0.01 0.01 0.1 Drain Current : I Fig.9 Source Current vs. Source-Drain Voltage 10 V =0V GS pulsed 1 0.1 0.01 0.0 0.5 Source-Drain Voltage : V Fig.11 Switching Characteristics 10000 1000 d(off) 100 t d(on 0.01 0.1 Drain Current : I www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. ...
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... RSD050N10 Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 T =25°C a f=1MHz V =0V GS 1000 100 10 1 0.01 0.1 1 Drain-Source Voltage : V Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 T =25°C c Single Pulse Rth =6.25°C/W (ch-a) Rth (t)=r(t)×Rth (ch-a) (ch-a) 1 0.1 0.01 0.0001 0.001 0.01 0.1 Pulse width : Pw (s) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. ...
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... RSD050N10 Measurement circuits D.U. Fig.1-1 Switching time measurement circuit D.U.T. I G(Const Fig.2-1 Gate charge measurement circuit www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. Pulse width V DS 90% 50% 10 10% 90 d(on) ...
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