bsz086p03ns3eg Infineon Technologies Corporation, bsz086p03ns3eg Datasheet - Page 7

• Manufacturer Part Number: bsz086p03ns3eg
• Description: Optimostm P3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
10
10
10
AS
BR(DSS)
2
1
0
=f(t
10
0
36
34
32
30
28
26
AV
-60
=f(T
); R
j
GS
); I
j(start)
-20
=25 Ω
D
=-250 µA
10
1
20
t
AV
T
j
[µs]
60
[°C]
125 °C
100
10
100 °C
2
25 °C
140
180
page 7
10
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
8
7
6
5
4
3
2
1
0
V
g(th)
g s(th)
0
GS
gate
); I
DD
Q
D
=-20 A pulsed
g s
-Q
Q
gate
g
Q
20
sw
[nC]
BSZ086P03NS3E G
Q
g d
-6 V
-24 V
-15 V
Q
g ate
2009-03-16
40