bsz086p03ns3eg Infineon Technologies Corporation, bsz086p03ns3eg Datasheet - Page 5

• Manufacturer Part Number: bsz086p03ns3eg
• Description: Optimostm P3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
40
30
20
10
60
50
40
30
20
10
DS
GS
0
0
); T
0
0
); |V
-10 V
j
=25 °C
j
GS
DS
-5.0 V
|>2|I
1
D
|R
1
2
DS(on)max
-V
-V
DS
GS
3
[V]
[V]
150 °C
2
4
25 °C
5
-3.5 V
-4.0 V
-4.5 V
-3.7 V
-4.2V
page 5
3
6
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
40
35
30
25
20
15
10
60
40
20
D
=f(I
5
0
0
); T
0
0
D
j
); T
=25 °C
GS
j
=25 °C
-4.0 V
10
10
-I
-I
D
D
20
[A]
[A]
BSZ086P03NS3E G
20
-4.5 V
30
-5.0 V
- 6 V
-10 V
2009-03-16
40
30