bsz086p03ns3eg Infineon Technologies Corporation, bsz086p03ns3eg Datasheet - Page 3

• Manufacturer Part Number: bsz086p03ns3eg
• Description: Optimostm P3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
3)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
g(th)
gd
sw
g
oss
rr
V
f =1 MHz
V
10 V, I
R
V
V
V
T
V
T
V
di
page 3
C
j
GS
DD
DD
GS
DD
GS
R
G
=25 °C
F
=25 °C
=15 V, I
/dt =100 A/µs
=6 Ω
=0 V, V
=-15 V, V
=-15 V, I
=0 to -10 V
=-15 V, V
=0 V, I
D
=-20 A,
F
F
DS
=-40 A,
=|I
D
=-15 V,
GS
GS
=20 A,
S
|,
=-
=0 V
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
3190
1520
16.1
18.4
43.2
34.9
typ.
110
-4.5
5.0
7.4
BSZ086P03NS3E G
16
46
35
39
34
8
-
-
-
max.
4785
2280
21.4
11.1
25.7
57.5
46.4
-1.1
165
160
6.7
24
69
53
12
40
-
-
-
Unit
pF
ns
nC
V
nC
A
V
ns
nC
2009-03-16