bsz086p03ns3eg Infineon Technologies Corporation, bsz086p03ns3eg Datasheet - Page 6

• Manufacturer Part Number: bsz086p03ns3eg
• Description: Optimostm P3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
12
10
4
3
2
1
DS
=f(T
8
6
4
0
-60
); V
j
); I
GS
D
5
-20
=0 V; f =1 MHz
=-20 A; V
10
20
98 %
GS
-V
T
=-10 V
typ.
DS
j
15
60
[°C]
[V]
100
20
Ciss
Crss
Coss
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
100
3.5
2.5
1.5
0.5
0.1
10
=f(T
SD
4
3
2
1
0
1
-60
)
0
j
); V
j
GS
-20
=V
DS
150 °C, typ
0.5
20
; I
D
=-105 µA
typ.
-V
min.
T
max.
j
SD
60
[°C]
BSZ086P03NS3E G
[V]
100
150 °C, 98%
25 °C, 98%
1
25 °C, typ
140
2009-03-16
180
1.5