mgsf3441vt1 Freescale Semiconductor, Inc, mgsf3441vt1 Datasheet - Page 4

• Manufacturer Part Number: mgsf3441vt1
• Description: Low Rds On Small-signal Mosfets Tmos Single P=channel Field Effect Transistors , Inc
• Manufacturer: Freescale Semiconductor, Inc

MGSF3441VT1
4
–0.1
–0.2
1.0
0.4
0.3
0.2
0.1
20
10
0.01
0
2.0
0.1
1.0
–50
0
Figure 7. Source–Drain Diode Forward Voltage
0.0001
DUTY CYCLE = 0.5
0.05
0.02
0.2
0.1
–25
0.25
V SD , SOURCE–TO–DRAIN VOLTAGE (V)
Figure 9. Threshold Voltage
0
I D = 250
Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient
0.50
T J , TEMPERATURE (°C)
25
m
0.001
A
0.75
SINGLE PULSE
50
TYPICAL ELECTRICAL CHARACTERISTICS
75
T J = 150°C
1.00
100
SQUARE WAVE PULSE DURATION (sec)
T J = 25°C
1.25
0.01
125
1.50
Motorola Small–Signal Transistors, FETs and Diodes Device Data
150
0.30
0.24
0.18
0.12
0.06
8.0
4.0
20
16
12
0
0
0.1
0
0.01
NOTES:
I D = 3.3 A
P DM
Figure 8. On–Resistance versus
Figure 10. Single Pulse Power
t 1
V GS , GATE–TO–SOURCE VOLTAGE (V)
2.0
Gate–to–Source Voltage
t 2
0.1
1.0
TIME (sec)
4.0
1. DUTY CYCLE, D = t 1 /t 2
2. PER UNIT BASE =
2.
3. T JM – T A = P DM Z thJA (t)
4. SURFACE MOUNTED
1.0
R thJA = 62.5°C/W
6.0
10
10
8.0
30