mgsf3441vt1 Freescale Semiconductor, Inc, mgsf3441vt1 Datasheet - Page 2

• Manufacturer Part Number: mgsf3441vt1
• Description: Low Rds On Small-signal Mosfets Tmos Single P=channel Field Effect Transistors , Inc
• Manufacturer: Freescale Semiconductor, Inc

(1) Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
MGSF3441VT1
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (2)
SOURCE–DRAIN DIODE CHARACTERISTICS
2
Drain–to–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current (V GS = ± 8.0 Vdc, V DS = 0)
Gate Threshold Voltage
Static Drain–to–Source On–Resistance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Continuous Current
Pulsed Current
Forward Voltage (2)
(V GS = 0 Vdc, I D = 10 A)
(V DS = 20 Vdc, V GS = 0 Vdc)
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 70°C)
(V DS = V GS , I D = 250 Adc)
(V GS = 4.5 Vdc, I D = 3.3 A)
(V GS = 2.5 Vdc, I D = 2.9 A)
Characteristic
(T A = 25°C unless otherwise noted)
(V
(V DD = 15 Vdc, I D = 1.0 A,
( DD
V GEN = 10 V, R L = 10 )
(V DS = 5.0 V)
(V DS = 5.0 V)
(V DG = 5.0 V)
15 Vd
, D
I
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1 0 A
,
V (BR)DSS
Symbol
V GS(th)
r DS(on)
t d(on)
t d(off)
I DSS
I GSS
C oss
C iss
C rss
V SD
I SM
Q T
I S
t r
t f
0.45
Min
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.078
0.110
3000
0.80
Typ
—
—
—
—
—
90
50
10
27
17
52
45
—
—
0.090
0.135
±100
Max
1.0
4.0
1.0
1.2
50
30
80
70
20
—
—
—
—
—
—
Ohms
nAdc
Unit
Vdc
Vdc
Adc
pF
pC
ns
A
A
V