mgsf3441vt1 Freescale Semiconductor, Inc, mgsf3441vt1 Datasheet

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mgsf3441vt1

Manufacturer Part Number
mgsf3441vt1
Description
Low Rds On Small-signal Mosfets Tmos Single P=channel Field Effect Transistors , Inc
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
mgsf3441vt1G
Manufacturer:
ON/安森美
Quantity:
20 000
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Preliminary Information
Low r DS(on) Small-Signal MOSFETs
TMOS Single P-Channel
Field Effect Transistors
conserving traits.
Cell Density, HDTMOS process. Low r DS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
©
MAXIMUM RATINGS
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ T A = 25 C
Drain Current
Total Power Dissipation @ T A = 25 C Mounted on FR4 t
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
MGSF3441VT1
MGSF3441VT3
Part of the GreenLine
These miniature surface mount MOSFETs utilize Motorola’s High
Motorola, Inc. 1997
Low r DS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TSOP 6 Surface Mount Package Saves Board Space
Visit our Web Site at http://www.mot–sps.com/ospd
Device
— Pulsed Drain Current (t p
(T J = 25 C unless otherwise noted)
Reel Size
ORDERING INFORMATION
13
7
Portfolio of devices with energy–
8 mm embossed tape
8 mm embossed tape
10 s)
Tape Width
Rating

5 sec
Quantity
10,000
3000
3
GATE
DRAIN
1
4
2
SOURCE
5
6
MGSF3441VT1
Symbol
T J , T stg
V DSS
R JA
ENHANCEMENT–MODE
V GS
I DM
r DS(on) = 78 m (TYP)
P D
T L
I D
CASE 318G–02, Style 1
Motorola Preferred Device
TMOS MOSFET
TSOP 6 PLASTIC
P–CHANNEL
D
D
– 55 to 150
Order this document
G
by MGSF3441VT1/D
Value
128
260
D
3.3
2.0
20
20
8.0
D
S
Unit
Vdc
Vdc
C/W
W
A
C
C
1

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mgsf3441vt1 Summary of contents

Page 1

... Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 ™ DRAIN 3 GATE Rating sec Tape Width Quantity 3000 10,000 Order this document by MGSF3441VT1/D MGSF3441VT1 Motorola Preferred Device P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET r DS(on (TYP ...

Page 2

... MGSF3441VT1 ELECTRICAL CHARACTERISTICS ( 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( Vdc Zero Gate Voltage Drain Current ( Vdc Vdc Vdc Vdc 70°C) Gate–Body Leakage Current ( ± 8.0 Vdc ...

Page 3

... 4 3.3 A 1.4 1.2 1.0 0.8 0.6 8.0 10 –50 –25 Figure 6. On–Resistance versus Junction MGSF3441VT1 –55°C 125°C 25°C 1.0 2.0 3.0 4 GATE–TO–SOURCE VOLTAGE (V) C iss C oss C rss 8 DRAIN–TO–SOURCE VOLTAGE (V) Figure 4. Capacitance 100 ...

Page 4

... MGSF3441VT1 TYPICAL ELECTRICAL CHARACTERISTICS 20 10 1.0 0 0.25 0.50 0. SOURCE–TO–DRAIN VOLTAGE (V) Figure 7. Source–Drain Diode Forward Voltage 0.4 0.3 0.2 0 250 A 0 –0.1 –0.2 –50 – TEMPERATURE (°C) Figure 9. Threshold Voltage 2.0 1.0 DUTY CYCLE = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 0.0001 0.001 Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient 4 0 ...

Page 5

... Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. MGSF3441VT1 5 ...

Page 6

... B 1.30 1.70 0.0512 0.0669 C 0.90 1.10 0.0354 0.0433 D 0.25 0.50 0.0098 0.0197 G 0.85 1.05 0.0335 0.0413 H 0.013 0.100 0.0005 0.0040 J 0.10 0.26 0.0040 0.0102 K 0.20 0.60 0.0079 0.0236 L 1.25 1.55 0.0493 0.0610 2.50 3.00 0.0985 0.1181 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN Mfax is a trademark of Motorola, Inc. MGSF3441VT1/D ...

Page 7

... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...

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