MTW32N25E Motorola, MTW32N25E Datasheet - Page 6

• Manufacturer Part Number: MTW32N25E
• Description: TMOS POWER FET
• Manufacturer: Motorola

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MTW32N25E
6
100
1.0
0.1
10
0.1
0.001
0.01
1.0
0.1
1.0E–05
V GS = 20 V
SINGLE PULSE
T C = 25 C
Figure 11. Maximum Rated Forward Biased
0.02
0.05
0.2
D = 0.5
0.1
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1.0
SINGLE PULSE
Safe Operating Area
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0E–04
0.01
10
Figure 14. Diode Reverse Recovery Waveform
I S
100
1.0E–03
SAFE OPERATING AREA
Figure 13. Thermal Response
t p
100 s
10 ms
1 ms
dc
1000
di/dt
t a
t, TIME (s)
1.0E–02
t rr
P (pk)
t b
I S
Motorola TMOS Power MOSFET Transistor Device Data
600
500
400
300
200
100
DUTY CYCLE, D = t 1 /t 2
0.25 I S
0
25
t 1
Figure 12. Maximum Avalanche Energy versus
t 2
1.0E–01
T J , STARTING JUNCTION TEMPERATURE ( C)
Starting Junction Temperature
50
TIME
R JC (t) = r(t) R JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) R JC (t)
75
1.0E+00
100
I D = 32 A
125
1.0E+01
150