MTW32N25E Motorola, MTW32N25E Datasheet

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MTW32N25E

Manufacturer Part Number
MTW32N25E
Description
TMOS POWER FET
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
TMOS E-FET
Power Field Effect Transistor
TO-247 with Isolated Mounting Hole
N–Channel Enhancement–Mode Silicon Gate
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
Drain–Source Voltage
Drain–Gate Voltage (R GS = 1.0 M )
Gate–Source Voltage — Continuous
Gate–Source Voltage
Drain Current — Continuous
Drain Current
Drain Current
Total Power Dissipation
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
Thermal Resistance — Junction to Case
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
This advanced TMOS E–FET is designed to withstand high
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I DSS and V DS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
Derate above 25 C
(V DD = 100 Vdc, V GS = 10 Vdc, I L = 20 Apk, L = 3.0 mH, R G = 25 )
— Continuous @ 100 C
— Single Pulse (t p
— Junction to Ambient
— Non–Repetitive (t p
(T C = 25 C unless otherwise noted)
Data Sheet
.
10 s)
10 ms)
Rating
G
D
S
Symbol
T J , T stg
V DGR
V GSM
V DSS
R JC
R JA
MTW32N25E
V GS
E AS
I DM
P D
T L
I D
I D
R DS(on) = 0.08 OHM
CASE 340K–01, Style 1
TMOS POWER FET
Motorola Preferred Device
32 AMPERES
250 VOLTS
TO–247AE
– 55 to 150
Order this document
Value
0.50
250
250
250
600
260
by MTW32N25E/D
2.0
32
25
96
40
20
40
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C
1

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MTW32N25E Summary of contents

Page 1

... Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 Data Sheet . Rating 10 ms Order this document by MTW32N25E/D MTW32N25E Motorola Preferred Device TMOS POWER FET 32 AMPERES 250 VOLTS R DS(on) = 0.08 OHM D G CASE 340K–01, Style 1 TO– ...

Page 2

... MTW32N25E ELECTRICAL CHARACTERISTICS OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( 250 Vdc Vdc 250 Vdc Vdc 125 C) Gate–Body Leakage Current ( CHARACTERISTICS (1) Gate Threshold Voltage ...

Page 3

... Figure 4. On–Resistance versus Drain Current and Gate Voltage 10000 125 C 1000 100 C 100 100 150 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage Current versus Voltage MTW32N25E 25 C 100 200 250 3 ...

Page 4

... MTW32N25E Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... DM ), the energy rating is specified at rated continuous cur- rent ( accordance with industry custom. The energy rat- ing must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at cur- rents below rated continuous I D can safely be assumed to equal the values indicated. MTW32N25E 100 5 ...

Page 6

... MTW32N25E 100 SINGLE PULSE 1.0 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1.0 www.DataSheet4U.com DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001 1.0E–05 6 SAFE OPERATING AREA 100 100 1000 0 ...

Page 7

... K 14.2 14.8 L 5.5 NOM P 3.7 4 3.55 3.65 R 5.0 NOM U 5.5 BSC V 3.0 3.4 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MTW32N25E INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 ...

Page 8

... MTW32N25E www.DataSheet4U.com Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “ ...

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