MTW32N25E Motorola, MTW32N25E Datasheet - Page 3

• Manufacturer Part Number: MTW32N25E
• Description: TMOS POWER FET
• Manufacturer: Motorola

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Motorola TMOS Power MOSFET Transistor Device Data
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.1
2.0
1.6
1.2
0.8
0.4
64
56
48
40
32
24
16
– 50
8
0
0
0
Figure 3. On–Resistance versus Drain Current
T J = 25 C
V GS = 10 V
V GS = 10 V
I D = 2.0 A
– 25
1
Figure 5. On–Resistance Variation with
8
Figure 1. On–Region Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
2
9 V
16
T J , JUNCTION TEMPERATURE ( C)
0
V GS = 10 V
I D , DRAIN CURRENT (AMPS)
3
and Temperature
24
25
Temperature
4
T J = 100 C
32
50
– 55 C
5
25 C
TYPICAL ELECTRICAL CHARACTERISTICS
6
40
75
8 V
7
100
48
8
125
56
7 V
6 V
5 V
9
150
64
10
10000
0.084
0.076
0.072
0.068
0.064
1000
0.08
100
64
56
48
40
32
24
16
10
8
0
1
2
0
0
Figure 4. On–Resistance versus Drain Current
T J = 25 C
V GS = 0 V
V DS 10 V
8
Figure 6. Drain–To–Source Leakage
Figure 2. Transfer Characteristics
3
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
50
16
Current versus Voltage
I D , DRAIN CURRENT (AMPS)
and Gate Voltage
4
24
100
T J = 125 C
V GS = 10 V
100 C
25 C
32
5
15 V
T J = – 55 C
150
40
6
MTW32N25E
48
200
100 C
7
56
25 C
3
250
64
8