BSO307N Infineon Technologies AG, BSO307N Datasheet - Page 8

• Manufacturer Part Number: BSO307N
• Description: SIPMOS Small-Signal-Transistor
• Manufacturer: Infineon Technologies AG

Data Sheet
Avalanche Energy E
parameter: I
R
Drain-source breakdown voltage
V
(BR)DSS
GS
mJ
= 25 Ω
V
60
40
30
20
10
37
35
34
33
32
31
30
29
28
27
0
20
0
BSO 307 N
= f ( T
20
40
D
= 5 A, V
40
j
)
60
60
80
AS
DD
80
= f ( T
= 25 V
100
100
j
)
120
120
˚C
˚C
T
T
j
j
160
160
8
Typ. gate charge
V
parameter: I
GS
= f ( Q
V
16
12
10
8
6
4
2
0
0
BSO 307 N
2
Gate
D puls
4
0,2
)
V
6
DS max
= 4.1 A
8
10
12
BSO 307N
0,8
14
V
DS max
16
Q
nC
05.99
Gate
19