BSO307N Infineon Technologies AG, BSO307N Datasheet
BSO307N
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BSO307N Summary of contents
Page 1
Preliminary Data SIPMOS Small-Signal-Transistor Features • Dual N channel • Enhancement mode • Avalanche rated • Logic Level • rated Maximum Ratings ˚C, unless otherwise specified Parameter Continuous drain current, ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec cooling area Electrical Characteristics ˚C, unless otherwise specified Parameter ...
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Electrical Characteristics Parameter Characteristics Transconductance ≥ 4 DS(on)max D Input capacitance MHz GS DS Output capacitance ...
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Electrical Characteristics ˚C, unless otherwise specified Parameter ˚C, unless otherwise specified Dynamic Characteristics Gate charge at threshold 0 Gate ...
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Power dissipation tot A BSO 307 N 2.4 W 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area ...
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Typ. output characteristics parameter µs p BSO 307 tot ...
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Typ. transfer characteristics I parameter µs p ≥ DS(on) max 1.8 2.0 2.2 2.5 2.8 3.0 ...
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Avalanche Energy parameter Ω 100 Drain-source breakdown voltage V ...