BSO307N Infineon Technologies AG, BSO307N Datasheet - Page 7

• Manufacturer Part Number: BSO307N
• Description: SIPMOS Small-Signal-Transistor
• Manufacturer: Infineon Technologies AG

Data Sheet
Typ. transfer characteristics I
parameter: t
V
Forward characteristics of reverse diode
I
parameter: T
F
DS
= f ( V
10
10
10
10
≥ 2 x I
12
10
A
A
9
8
7
6
5
4
3
2
1
0
1.8
-1
2
1
0
0.0
BSO 307 N
SD
2.0
)
D
0.4
p
x R
j
2.2
= 80 µs
, t
0.8
DS(on) max
p
2.5
= 80 µs
1.2
T
T
T
T
2.8
j
j
j
j
= 25 ˚C typ
= 150 ˚C typ
= 25 ˚C (98%)
= 150 ˚C (98%)
1.6
3.0
3.2
2.0
D
= f ( V
3.5
2.4
V
V
V
V
GS
GS
SD
4.0
3.0
)
7
Gate threshold voltage
V
parameter : V
GS(th)
3.2
2.4
2.0
1.6
1.2
0.8
0.4
0.0
V
-60
= f ( T
-20
j
)
GS
= V
20
DS
, I
D
60
= 20 µA
BSO 307N
100
V
T
j
05.99
160
max
typ
min