BSO307N Infineon Technologies AG, BSO307N Datasheet - Page 4

• Manufacturer Part Number: BSO307N
• Description: SIPMOS Small-Signal-Transistor
• Manufacturer: Infineon Technologies AG

Data Sheet
Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified
Parameter
at T j = 25 ˚C, unless otherwise specified
Dynamic Characteristics
Gate charge at threshold
V
Gate charge at V
V
Gate charge total
V
Gate plateau voltage
V
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
A
A
DD
DD
DD
DD
GS
R
R
= 25 ˚C
= 25 ˚C
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
= 0 V, I
F
F =
F
= I
D
D
D
D
= 10 A
l
S
S
= 0.1 A, V
= 4.1 A, V
= 4.1 A, V
= 4.1 A
, d i
, d i
gs
=5V
F
F
/d t = 100 A/µs
/d t = 100 A/µs
GS
GS
GS
= 0 to 1 V
= 0 to 5 V
= 0 to 10 V
4
Symbol
Q
Q g(5)
Q
V
I
I
V
t
Q
S
SM
rr
(plateau)
SD
G(th)
g
rr
min.
-
-
-
-
-
-
-
-
-
Values
0.85
typ.
0.4
3.2
13
25
20
8
-
-
max.
BSO 307N
0.6
1.4
12
20
20
38
30
5
-
Unit
nC
nC
V
A
V
ns
µC
05.99