TPCP8901 Toshiba Semiconductor, TPCP8901 Datasheet - Page 6

• Manufacturer Part Number: TPCP8901
• Description: Field Effect Transistor Silicon MOS Type
• Manufacturer: Toshiba Semiconductor

Common
1000
100
10
0.001
1
0.01
0.1
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
Single-device operation
Pulse width t
r
th
1
– t
6
w
w
(s)
1.0
0.8
0.6
0.4
0.2
0
0
10
Collector power dissipation at the single-device
operation is 0.83W.
Collector power dissipation at the single-device value at
dual operation is 0.48W.
Collector power dissipation at the dual operation is set
to 0.96W.
Permissible power dissipation for Q1
Permissible Power Dissipation for
0.2
Simultaneous Operation
DC operation
Ta = 25°C
Mounted on an FR4 board glass epoxy,
1.6 mm thick, Cu area: 645 mm
100
0.4
P
C
(W)
1000
0.6
2
)
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0.8
2
)
TPCP8901
2006-11-13
1.0