TPCP8901 Toshiba Semiconductor, TPCP8901 Datasheet - Page 4

• Manufacturer Part Number: TPCP8901
• Description: Field Effect Transistor Silicon MOS Type
• Manufacturer: Toshiba Semiconductor

NPN
0.01
1.0
0.8
0.6
0.4
0.2
0.1
1.0
0.8
0.6
0.4
0.2
0.001
0
1
0
0
0
Common emitter
β = 50
Single nonrepetitive pulse
Common emitter
V CE = 2 V
Single nonrepetitive pulse
Base−emitter saturation voltage V
Collector−emitter voltage V
20
0.2
0.2
Collector current I
0.01
0.4
0.4
Ta = 100°C
V
15
CE (sat)
I
I
C
C
– V
25°C
– V
0.6
0.6
Ta = 100°C
CE
Common emitter
Ta = 25°C
Single nonrepetitive pulse
BE
– I
C
0.8
0.1
C
0.8
CE
(A)
−55°C
25°C
I B = 1 mA
1.0
BE
−55°C
1.0
(V)
10
8
6
4
2
(V)
1.2
1.2
1
4
10000
1000
0.01
100
0.1
0.1
10
10
10
0.001
0.001
1
1
1
0.1
Common emitter
V CE = 2 V
Single nonrepetitive pulse
Common emitter
β = 50
Single nonrepetitive pulse
*: Single nonrepetitive pulse
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
I C max (Continuous)*
I C max (Pulsed) ※
I C max (Pulsed) ※
Ta = 25°C
Collector-emitter voltage V
2
).
Ta = 100°C
DC operation
Ta = 25°C
10 s※*
Collector current I
Collector current I
Ta = −55°C
25°C
0.01
25°C
0.01
Safe Operation Area
1
V
BE (sat)
100 ms※*
h
10 ms※
FE
100 μs※
−55°C
– I
C
– I
100°C
1 ms※
C
C
C
0.1
0.1
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10
(A)
(A)
CE
TPCP8901
(V)
10 μs※
2006-11-13
1
1
100