TPCP8901 Toshiba Semiconductor, TPCP8901 Datasheet

TPCP8901

Manufacturer Part Number

TPCP8901

Description

Field Effect Transistor Silicon MOS Type

Manufacturer

Toshiba Semiconductor

Datasheet

1.TPCP8901.pdf (7 pages)

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Download datasheet (278Kb)

Portable Equipment Applications

Switching Applications

•

Absolute Maximum Ratings

Small footprint due to small and thin package

High DC current gain : PNP h

Low collector-emitter saturation : PNP V

High-speed switching : PNP t

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power

dissipation (t = 10s)

Collector power

dissipation (DC)

Junction temperature

Storage temperature range

Note 1: Please use devices on condition that the junction temperature is below 150℃.

Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

Icp=±5A (@ t≦100μs)

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)

Single-device

operation

Single-device

value at dual

operation

Single-device

operation

Single-device

value at dual

operation

Pulse (Note 1 )

DC (Note 1)

:NPN h

: NPN t

: NPN V

= 70 ns (typ.)

= 85 ns (typ.)

= 400 to 1000 (I

= 200 to 500 (I

(Ta = 25°C)

Symbol

TPCP8901

CBO

CEO

EBO

(Note 2)

stg

CE (sat)

−100

PNP

−0.8

−5.0

−50

−7

−55 to 150

= 0.17 V (max)

= −0.20 V (max)

= −0.1 A)

Rating

= 0.1 A)

1.48

0.80

0.83

0.48

150

NPN

100

1.0

5.0

Unit

°C

)

Weight: 0.017 g (typ.)

JEDEC

JEITA

TOSHIBA

0.475

1.Emitter1

2.Base1

3.Emitter2

4.Base2

0.33±0.05

0.025

0.65

5.Collector2

6.Collector2

7.Collector1

8.Collector1

2.9±0.1

www.DataSheet4U.com

0.17±0.02

0.05

2-3V1C

TPCP8901

2006-11-13

―

0.28

1.12

0.28

0.8±0.05

+0.1

+0.13

+0.1

-0.11

0.05

-0.12

Unit: mm

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