TPCP8901 Toshiba Semiconductor, TPCP8901 Datasheet - Page 5

• Manufacturer Part Number: TPCP8901
• Description: Field Effect Transistor Silicon MOS Type
• Manufacturer: Toshiba Semiconductor

PNP
0.001
0.01
1.0
0.8
0.6
0.4
0.2
0.1
1.0
0.8
0.6
0.4
0.2
10
0.001
0
1
0
0
0
Base−emitter saturation voltage −V
Common emitter
V CE = −2 V
Single nonrepetitive pulse
Common emitter
β = 30
Single nonrepetitive pulse
Collector−emitter voltage −V
−100
0.2
0.2
Collector current −I
0.01
0.4
0.4
V
−50
CE (sat)
Ta = 100°C
I
I
C
C
25°C
Ta = 100°C
– V
– V
0.6
0.6
CE
BE
Common emitter
Ta = 25°C
Single nonrepetitive pulse
– I
C
0.8
0.8
0.1
C
−55°C
CE
(A)
I B = −1 mA
25°C
1.0
1.0
BE
−55°C
−30
−20
−15
−10
−40
−5
−2
(V)
(V)
1.2
1.2
1
5
10000
1000
0.01
100
0.1
0.1
10
10
10
0.001
0.001
1
1
1
0.1
*: Single nonrepetitive pulse
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
I C max (Pulse) ※
I C max (Pulse) ※
I C max (Continuous)*
Common emitter
V CE = −2 V
Single nonrepetitive pulse
Common emitter
β = 30
Single nonrepetitive pulse
Ta = 25°C
Collector−emitter voltage −V
2
).
25°C
Collector current −I
Collector current −I
Ta = 100°C
10 s※*
25°C
Ta = −55°C
0.01
0.01
Safe operation area
1
V
BE (sat)
h
10 ms※
FE
100 ms※*
−55°C
100 μs※
– I
100°C
C
– I
1 ms※
C
DC operation
Ta = 25°C
0.1
0.1
C
C
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10
(A)
(A)
CE
TPCP8901
2006-11-13
(V)
10 μs※
1
1
100