TPCP8602 Toshiba Semiconductor, TPCP8602 Datasheet - Page 4

• Manufacturer Part Number: TPCP8602
• Description: Field Effect Transistor Silicon MOS Type
• Manufacturer: Toshiba Semiconductor

0.01
0.1
10
1
0.1
*: Single nonrepetitive pulse
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
These characteristic curves must
be derated linearly with increase
in temperature.
I C max (Pulse)*
(Continuous)*
Ta = 25°C
Collector−emitter voltage −V
I C max
2
).
1000
100
DC operation
10
0.001
1
Ta = 25°C
Safe operating area
10 s*
1
100 ms*
10 ms*
0.01
1 ms*
100 μs*
10
V CEO max
CE
Curves apply only to limited areas of thermal resistance.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
0.1
(V)
10 μs*
Pulse width t
100
r
th
– t
1
4
w
w
(s)
10
100
2
1000
)
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TPCP8602
2006-11-13