TPCP8602 Toshiba Semiconductor, TPCP8602 Datasheet

TPCP8602

Manufacturer Part Number

TPCP8602

Description

Field Effect Transistor Silicon MOS Type

Manufacturer

Toshiba Semiconductor

Datasheet

1.TPCP8602.pdf (5 pages)

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High-Speed Switching Applications

DC-DC Converter Applications

Strobe Flash Applications

•

Absolute Maximum Ratings

High DC current gain: h

Low collector-emitter saturation: V

High-speed switching: t

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power

dissipation (t = 10s)

Junction temperature

Storage temperature range

Note 1: Ensure that the junction temperature does not exceed 150°C during use of this device.

Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristic

Pulse (Note 1 )

DC (Note 1)

t = 10s

= 90 ns (typ.)

TOSHIBA Transistor Silicon PNP Epitaxial Type

= 200 to 500 (I

CE (sat)

(Ta = 25°C)

Symbol

TPCP8602

CBO

CEO

EBO

(Note 2)

stg

= −0.2 V (max)

= −0.3 A)

−55 to 150

Rating

−0.25

−2.5

−4.0

1.25

−50

150

3.0

−7

Unit

°C

Weight: 0.017 g (typ.)

JEDEC

JEITA

TOSHIBA

)

0.475

1.Collector

2.Collector

3.Collector

4.Base

0.33±0.05

0.025

0.65

2.9±0.1

5.Emitter

6.Collector

7.Collector

8.Collector

www.DataSheet4U.com

0.17±0.02

0.05

2-3V1A

TPCP8602

2006-11-13

―

0.28

1.12

0.28

0.8±0.05

+0.1

+0.13

+0.1

-0.11

0.05

-0.12

Unit: mm

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TPCP8602 Summary of contents

Page 1

... V V CBO − CEO − EBO −2 −4 −0. 3.0 P (Note 1.25 T 150 °C j −55 to 150 T °C stg 1 TPCP8602 www.DataSheet4U.com Unit: mm 0.33±0.05 0. 0.475 0. 0.65 2.9±0.1 A 0.8±0.05 S 0.025 +0.1 S 0.28 0.17±0.02 -0.11 +0.13 1.12 -0.12 +0.13 1.12 -0.12 +0.1 0.28 5.Emitter -0.11 1.Collector 6.Collector 2 ...

Page 2

... See Figure 3 circuit diagram ∼ − Ω stg = −I = − VCC Output TPCP8602 www.DataSheet4U.com (Note 8602 Type * Lot No. (weekly code) Min Typ. Max Unit ⎯ ⎯ −100 nA ⎯ ...

Page 3

... Common emitter − Single nonrepetitive pulse 10 −2.4 0.001 (V) 10 Common emitter β Single nonrepetitive pulse Ta = −55°C 1 100 0.1 10 0.001 Collector current −I −1.6 (V) 3 TPCP8602 www.DataSheet4U.com h – 0.01 0 Collector current −I ( – (sat 0.01 0 (A) C ...

Page 4

... FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ). These characteristic curves must be derated linearly with increase V CEO max in temperature. 0.01 0 Collector−emitter voltage − – 0 100 Pulse width t ( μs* 100 (V) 4 TPCP8602 www.DataSheet4U.com 2 ) 1000 2006-11-13 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 TPCP8602 www.DataSheet4U.com 20070701-EN 2006-11-13 ...

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