TPCP8602 Toshiba Semiconductor, TPCP8602 Datasheet - Page 2

• Manufacturer Part Number: TPCP8602
• Description: Field Effect Transistor Silicon MOS Type
• Manufacturer: Toshiba Semiconductor

Figure 1. Circuit Configuration
Electrical Characteristics
Note 4: ● on the lower left of the marking indicates Pin 1
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Switching time
Figure 3. Switching Time Test Circuit & Timing Chart
I
B1
Duty cycle ＜1%
* Weekly code (three digits):
Characteristic
20μs
8 7 6 5
1 2 3 4
Rise time
Storage time
Fall time
I
B2
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(lowest-order digit of the calendar year)
Input
I
(Ta = 25°C)
B2
I
B1
V
V
V
Symbol
VCC
h
h
(BR) CEO
CE (sat)
(top view)
BE (sat)
I
I
FE
FE
C
CBO
EBO
t
stg
t
t
ob
r
f
Output
(1)
(2)
V
V
I
V
V
I
I
V
See Figure 3 circuit diagram
V
I
C
C
C
B1
CB
EB
CE
CE
CB
CC
= −10 mA, I
= −1 A, I
= −1 A, I
2
= −I
= −7 V, I
= −50 V, I
= −2 V, I
= −2 V, I
= 10 V, I
∼ − 30 V, R
B2
= −33 mA
Test Condition
B
B
= −33 mA
= −33 mA
C
C
C
E
B
E
L
= 0
= −0.3 A
= −1.0 A
= 0, f = 1MHz
= 0
= 30 Ω
Figure 2. Marking
= 0
8
8602
1
7
(weekly code)
2
−50
200
100
Min
⎯
⎯
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Lot No.
6
3
*
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4
5
Typ.
250
(Note 4)
20
60
90
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⎯
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TPCP8602
2006-11-13
Type
−100
−100
Max
−0.2
−1.1
500
⎯
⎯
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Unit
nA
nA
pF
ns
V
V
V