TPCP8602 Toshiba Semiconductor, TPCP8602 Datasheet - Page 3

• Manufacturer Part Number: TPCP8602
• Description: Field Effect Transistor Silicon MOS Type
• Manufacturer: Toshiba Semiconductor

0.001
−2.5
−2.0
−1.5
−1.0
−0.5
0.01
−2.5
−2.0
−1.5
−1.0
−0.5
0.1
0.001
0
1
0
0
0
Common emitter
V CE =
Single nonrepetitive pulse
Common emitter
β = 30
Single nonrepetitive pulse
Collector−emitter voltage V
−0.4
Ta = 100°C
Base−emitter voltage V
−
2 V
Collector current −I
−0.4
0.01
−0.8
−40
Ta = 100°C
V
25
CE (sat)
I
I
C
C
−30
−20
−1.2
−0.8
– V
– V
0.1
CE
BE
−55
– I
Common emitter
Ta = 25°C
Single nonrepetitive
C
−1.6
25
C
BE
−1.2
CE
(A)
1
−55
I B = −1 mA
−2.0
(V)
−15
−10
−2
−5
(V)
−1.6
−2.4
10
3
1000
100
0.1
10
10
0.001
0.001
1
Ta = 100°C
Common emitter
V CE =
Single nonrepetitive pulse
Common emitter
β = 30
Single nonrepetitive pulse
−55
Ta = −55°C
25
−
2 V
100
Collector current −I
Collector current −I
0.01
0.01
V
BE (sat)
h
FE
25
0.1
0.1
– I
C
– I
C
C
C
www.DataSheet4U.com
(A)
(A)
1
1
TPCP8602
2006-11-13
10
10