K15N120 Infineon Technologies, K15N120 Datasheet - Page 8

• Manufacturer Part Number: K15N120
• Description: FAST IGBT IN NPT-TECHNOLOGY
• Manufacturer: Infineon Technologies

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Power Semiconductors
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
30 s
20 s
10 s
20V
15V
10V
0 s
CE
5V
0V
Figure 17. Typical gate charge
(I
10V
0nC
C
= 1200V, start at T
= 15A)
V
GE
11V
,
Q
50nC
GATE
GE
,
GATE CHARGE
-
12V
EMITTER VOLTAGE
100nC
j
= 25 C)
13V
150nC
U
CE
14V
=960V
15V
8
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V V
100pF
300A
250A
200A
150A
100A
50A
1nF
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
0A
10V
GE
0V
V
= 0V, f = 1MHz)
CE
CE
V
,
GE
COLLECTOR
12V
1200V, T
,
GATE
10V
-
14V
EMITTER VOLTAGE
SKW15N120
C
-
= 25 C, T
EMITTER VOLTAGE
20V
16V
Rev. 2_2
j
150 C)
18V
30V
C
C
C
Sep 08
oss
rss
iss
20V