K15N120 Infineon Technologies, K15N120 Datasheet - Page 3

• Manufacturer Part Number: K15N120
• Description: FAST IGBT IN NPT-TECHNOLOGY
• Manufacturer: Infineon Technologies

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Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Power Semiconductors
1)
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E.
F
F
t
t
t
t
E
E
E
t
t
t
Q
I
d i
t
t
t
t
E
E
E
t
t
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/ d t
/ d t
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
T
V
I
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
C
j
j
j
j
C C
G E
R
C C
G E
R
G
G
= 25 C ,
= 25 C ,
F
= 150 C
=15A,
= 150 C
F
1 )
1 )
1 )
1 )
= 80 0 V , I
= 80 0 V , I
= 3 3 ,
= 3 3 ,
/d t= 650A/ s
/d t= 650A/ s
3
= 80 0 V, I
=15V/0V,
= 80 0 V,
=15V/0V,
=1 80nH,
=1 80nH,
=40pF
=40pF
Conditions
Conditions
F
F
C
=15A,
=15A,
=15A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SKW15N120
Value
Value
typ.
typ.
580
500
652
200
140
1.1
0.8
1.9
0.5
1.9
1.5
3.4
2.0
18
23
22
65
15
38
30
31
23
Rev. 2_2
max.
max.
750
780
1.5
1.1
2.6
2.3
2.0
4.3
24
30
29
46
36
37
Sep 08
Unit
ns
mJ
ns
A
A/ s
Unit
ns
mJ
ns
A
A/ s
C
C