K15N120 Infineon Technologies, K15N120 Datasheet - Page 2

• Manufacturer Part Number: K15N120
• Description: FAST IGBT IN NPT-TECHNOLOGY
• Manufacturer: Infineon Technologies

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Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at T
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
Power Semiconductors
Allowed number of short circuits: <1000; time between short circuits: >1s.
1)
j
= 25 C, unless otherwise specified
Symbol
R
R
R
V
V
V
V
I
I
g
C
C
C
Q
L
I
Symbol
C E S
G E S
C ( S C )
f s
E
( B R ) C E S
C E ( s a t )
F
G E ( t h )
t h J C
t h J C D
t h J A
i s s
o s s
r s s
G a t e
V
I
V
T
T
V
T
T
I
V
T
T
V
V
V
V
f=1MHz
V
V
V
1 00 V V
T
C
C
j
j
j
j
C E
j
j
C E
j
G E
G E
G E
C E
C E
G E
C C
G E
G E
=1 000 A
= 25 C
= 150 C
= 25 C
= 150 C
=600 A,V
= 25 C
= 150 C
2
=1200V,V
=0V,V
= 0 V ,
= 0 V , I
=20V, I
=25V,
= 0 V ,
= 96 0 V, I
=15V
=15V,t
= 15 V, I
Conditions
Conditions
150 C
C C
G E
F
S C
= 1 5 A
C
1 200 V,
=20V
C E
=15A
C
C
G E
=15A
=15A
1 0 s
=V
=0V
G E
1200
min.
2.5
3
-
-
-
-
-
-
-
-
-
-
-
SKW15N120
Max. Value
Value
1250
0.63
1.75
typ.
155
130
145
1.5
3.1
3.7
2.0
40
11
65
13
4
-
-
-
-
Rev. 2_2
max.
1500
200
800
100
185
175
3.6
4.3
2.5
80
5
-
-
-
-
Sep 08
Unit
K/W
Unit
V
nA
S
pF
nC
nH
A
A