K15N120 Infineon Technologies, K15N120 Datasheet

K15N120

Manufacturer Part Number

K15N120

Description

FAST IGBT IN NPT-TECHNOLOGY

Manufacturer

Infineon Technologies

Datasheet

1.K15N120.pdf (13 pages)

Current page: 1 of 13
Download datasheet (382Kb)

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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Type

SKW15N120

Maximum Ratings

Parameter

Collector-emitter voltage

DC collector current

Pulsed collector current, t

Turn off safe operating area

Diode forward current

Diode pulsed current, t

Gate-emitter voltage

Short circuit withstand time

Power dissipation

Operating junction and storage temperature

Soldering temperature,

wavesoldering, 1.6mm (0.063 in.) from case for 10s

Power Semiconductors

J-STD-020 and JESD-022

Allowed number of short circuits: <1000; time between short circuits: >1s.

Pb-free lead plating; RoHS compliant

Lower E

Short circuit withstand time – 10 s

Designed for:

NPT-Technology offers:

Qualified according to JEDEC

Complete product spectrum and PSpice Models :

= 25 C

= 100 C

= 25 C

= 100 C

= 25 C

= 15V, 100V V

1200V, T

- Motor controls

- Inverter

- SMPS

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

off

compared to previous generation

150 C

1200V

1200V, T

limited by T

15A

for target applications

jmax

150 C

jmax

1.5mJ

off

150 C

http://www.infineon.com/igbt/

K15N120

Marking

Symbol

C p u l s

F p u l s

S C

C E

G E

t o t

, T

s t g

PG-TO-247-3

Package

SKW15N120

-55...+150

Value

1200

198

260

Rev. 2_2

PG-TO-247-3

Unit

Sep 08

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