NUS5530MN ON Semiconductor, NUS5530MN Datasheet - Page 7

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NUS5530MN

Manufacturer Part Number
NUS5530MN
Description
Integrated Power Mosfet With Pnp Low Vce Sat Switching Transistor
Manufacturer
ON Semiconductor
Datasheet

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150
100
500
450
400
350
300
250
200
50
0.001
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0
0.01
0.1
0.001
0.001
0.001
Figure 10. Collector Emitter Saturation Voltage
Figure 14. Base Emitter Turn−On Voltage
Figure 12. DC Current Gain versus
I
0.01
I
C
C
0.01
I
versus Collector Current
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
C
125°C (5 V)
125°C (2 V)
versus Collector Current
TYPICAL ELECTRICAL CHARACTERISTICS FOR PNP TRANSISTOR
, COLLECTOR CURRENT (A)
0.01
I
C
Collector Current
25°C (5 V)
25°C (2 V)
/I
50
10
B
= 100
−55°C (5 V)
−55°C (2 V)
0.1
0.1
100°C
−55°C
0.1
25°C
1
1.0
1.0
http://onsemi.com
10
7
750
700
650
600
550
500
450
400
350
300
1.0
0.8
0.6
0.4
0.2
0.25
0.20
0.15
0.10
0.05
0
0
0
0.001
0.001
Figure 11. Collector Emitter Saturation Voltage
Figure 13. Base Emitter Saturation Voltage
I
0.5
C
/I
B
= 50
1.0
V
Figure 15. Input Capacitance
EB
I
I
C
C
versus Collector Current
versus Collector Current
, COLLECTOR CURRENT (A)
, EMITTER BASE VOLTAGE (V)
0.01
, COLLECTOR CURRENT (A)
0.01
1.5
−55°C
100°C
25°C
2.0
2.5
0.1
0.1
3.0
3.5
4.0
100°C
1.0
1.0
−55°C
4.5
25°C
5.0

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