NUS5530MN ON Semiconductor, NUS5530MN Datasheet - Page 4

• Manufacturer Part Number: NUS5530MN
• Description: Integrated Power Mosfet With Pnp Low Vce Sat Switching Transistor
• Manufacturer: ON Semiconductor

7. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS FOR PNP TRANSISTORS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
Collector −Base Breakdown Voltage (I
Emitter −Base Breakdown Voltage (I
Collector Cutoff Current (V
Collector−Emitter Cutoff Current (V
Emitter Cutoff Current (V
DC Current Gain (Note 7)
(I
(I
(I
Collector −Emitter Saturation Voltage (Note 7)
(I
(I
(I
Base −Emitter Saturation Voltage (Note 7)
(I
Base −Emitter Turn−on Voltage (Note 7)
(I
Cutoff Frequency (I
Input Capacitance (V
Output Capacitance (V
Turn−on Time (V
Turn−off Time (V
C
C
C
C
C
C
C
C
= −1.0 A, V
= −1.5 A, V
= −2.0 A, V
= −0.1 A, I
= −1.0 A, I
= −2.0 A, I
= −1.0 A, I
= −2.0 A, V
B
B
B
B
CE
CE
CE
CE
= −0.010 A)
= −0.010 A)
= −0.02 A)
= −0.01 A)
CC
CC
= −2.0 V)
= −2.0 V)
= −2.0 V)
= −3.0 V)
C
= −10 V, I
= −10 V, I
EB
= −100 mA, V
CB
= −0.5 V, f = 1.0 MHz)
EB
= −3.0 V, f = 1.0 MHz)
CB
= −6.0 Vdc)
Characteristic
= −35 Vdc, I
B1
B1
= −100 mA, I
= I
CES
CE
B2
E
C
= −0.1 mAdc, I
= −100 mA, I
= −5.0 V, f = 100 MHz)
= −35 Vdc)
= −0.1 mAdc, I
C
= −10 mAdc, I
E
= 0)
C
= −1 A, R
C
C
= 1 A, R
E
= 0)
B
= 0)
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L
= 0)
= 3 W)
L
= 3 W)
4
(T
A
= 25°C unless otherwise noted)
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
Cobo
I
CE(sat)
BE(sat)
Cibo
I
I
BE(on)
h
CBO
CES
EBO
t
t
f
on
off
FE
T
−5.0
Min
−35
−55
100
100
100
100
−
−
−
−
−
−
−
−
−
−
−
−
Typical
−0.03
−0.03
−0.01
−0.68
−0.81
−7.0
−45
−65
200
200
200
600
225
85
35
−
−
−
−
−0.875
−0.10
−0.15
−0.30
−0.85
Max
−0.1
−0.1
−0.1
400
650
100
−
−
−
−
−
−
−
−
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
pF
pF
nS
nS
V
V
V